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相关行业资讯AppliedPhysicsExpress4(2；DOI:10.1143/APEX.4.08210；??1??)InGaN/GaNLight-Emi；withLowEfficiencyDroopat；YujiZhao1?,ShinichiTanak；12；ElectricalandComputerEng；OptoelectronicLaboratory；??
AppliedPhysicsExpress4(DOI:10.1143/APEX.4.082104??1??)InGaN/GaNLight-EmittingDiodesHigh-PowerBlue-VioletSemipolar(202withLowEfficiencyDroopat200A/cm2YujiZhao1?,ShinichiTanaka2,Chih-ChienPan2,KenjiFujito3,DanielFeezell2,JamesS.Speck2,StevenP.DenBaars1;2,andShujiNakamura1;212ElectricalandComputerEngineeringDepartment,UniversityofCalifornia,SantaBarbara,CA93106,U.S.A.MaterialsDepartment,UniversityofCalifornia,SantaBarbara,CA93106,U.S.A.3OptoelectronicLaboratory,MitsubishiChemicalCorporation,Ushiku,Ibaraki300-1295,JapanReceivedJune18,2011;acceptedJune30,2011;publishedonlineJuly15,2011??1??)GaNWereportahigh-powerbluelight-emittingdiode(LED)withahighexternalquantumefficiencyandlowdrooponafree-standing(202substrate.Ataforwardcurrentof20mA,theLEDshowedapeakexternalquantumefficiencyof52%andanoutputpowerof30.6mW.Inhighercurrentdensityregions,theLEDalsoshowedoutstandingperformance,withdroopratiosof0.7%at35A/cm2,4.3%at50A/cm2,8.5%at100A/cm2,and14.3%at200A/cm2.Theoutputpowerandexternalquantumefficiencyat200A/cm2were266.5mWand45.3%,respectively.#2011TheJapanSocietyofAppliedPhysicsight-emittingdiodes(LEDs)basedonInGaNtechnologyenableawiderangeofapplicationsincludingtra?csignals,full-colordisplays,back-lightingsourcesforliquid-crystaldisplays,andgenerallighting.1)Atpresent,thewidespreadadoptionofLEDs,particularlyforgenerallighting,requirescostreductionsandimprovementsindeviceperformance.OnepathtowardlowercostisthereductionoftheLEDfootprintandtheoperationofsmall-area(<0:1mm2)LEDsathighcurrentdensities(e.g.,beyond100A/cm2)forhigh-powerappli-cations.However,therealizationofviabledevicesinthisoperatingregimerequirestheeliminationofthephenomenonknownas‘‘e?ciencydroop’’,whichreferstothereductioninexternalquantume?ciency(EQE)observedathigherinjectioncurrents.2)Thephysicaloriginofe?ciencydroopisstillbeingdebatedandseveraldi?erentmechanismshavebeenproposedasexplanations,includingcarrierleakage,2)Augerrecombination,3,4)carrierdelocalization,5)defects,6)andjunctionheating.7)CurrentcommerciallyavailableInGaN-basedLEDsgrownonthe‘‘polar’’c-planeofthecrystalsu?erfrominternalpolarization-relatedelectric?eldsthatseparatetheelectronandholewavefunctionsinthequantumwellsandlimittheradiativerecombinationrate.8C11)Ontheotherhand,devicesgrownonnonpolarorsemipolarorientationshavebeendemonstratedwitheliminatedorreducedpolarization?elds12C15)andaretheoreticallypredictedtohavehigherradiativerecombinationratesthanc-planedevices.16)Todate,high-e?ciencysemipolarblue17)andgreenLEDs18)havebeendemonstrated.Recently,semipolar??)plane,whichismiscut15degreesplanessuchasthe(2021fromthem-plane,haveattractedsigni?cantinterestduetotheirpromisingperformanceinthegreenregionofthespectrum.18C21)Inthiswork,wereportforthe?rsttimeablue-violetInGaN/GaNLEDonafree-standingsemipolar??1??)bulkGaNsubstratewithahighlightoutputpower,(202EQEgreaterthan50%,andlowdroopratiosof0.7%at35A/cm2,4.3%at50A/cm2,8.5%at100A/cm2,and14.3%at200A/cm2.LEDepitaxiallayerswerehomoepitaxiallygrownbyconventionalmetalorganicchemicalvapordeposition??1??)GaNsubstratessupplied(MOCVD)onfree-standing(202?LTi/AuITOp-GaN:Mg5 × p-AlGaN/GaN:MgInGaN/GaN MQWs10 × n-InGaN/GaN:Sin-GaN:Si(2021)GaNTi/AuTi/Al/Ni/Au??1??)LEDdevicewithbacksideSchematicviewofthesemipolar(202rougheningstructures.Fig.1.E-mailaddress:yujizhao@engineering.ucsb.edubyMitsubishiChemicalCorporation.Thedevicestructureconsistsofa1??mSi-dopedn-typeGaNlayer,tensetsofSi-dopedInGaN/GaNsuperlattices,threeperiodsofIn-GaN(3nm)/GaN(13nm)multiplequantumwells(MQWs),a?ve-setMg-dopedAlGaN/GaNsuperlatticeelectronblockinglayer(EBL),anda60nmp-typeGaNlayer.??1??)LEDfabrication,arectangularmesapatternForthe(202(activeareaof0.1mm2)wasformedbyconventionallithographyandchlorine-basedinductivelycoupledplasma(ICP)etchingafteranindiumtinoxide(ITO)current-spreadinglayerwasdepositedbyelectronbeamevaporation.Ti/Al/Ni/Aun-typecontactsandTi/Aupadsweredepositedbyelectronbeamevaporationandaconventionallift-o?process.Toimprovethelightextractione?ciency,thebacksideoftheLEDwasroughened17)andpackagedwithaverticalstandtransparentstructure.22)Aschematicofthedevicewiththeroughenedbacksideandaschematic??1??)planeinthewurzitestructureareviewofthe(202presentedinFigs.1and2,respectively.Room-temperatureelectroluminescence(EL)measure-mentsunderpulsedconditionswithadutycycleof1%wereperformedinacalibratedintegratingsphere.Figure3presentsthelightoutputpowervscurrentdensityandEQEvscurrentdensitycurvesfortheLED.Ataforwardcurrentof20mA,thesemipolarLEDhadanoutputpowerof30.6mWandanEQEof52%,whicharecomparabletothe#2011TheJapanSocietyofAppliedPhysicsAppl.Phys.Express4(Y.Zhaoetal.GaNWavelength (nm)FWHM (nm)[]Pulsed condition with 1% duty cycle15[1210]??1??TinthewurtzitecrystalSchematicviewofsemipolare202structure.Fig.2.2Current Density (A/cm)10200??1??TLEDatELpeakwavelengthandFWHMofthesemipolare202di?erentcurrentdensitiesunderpulsedoperation.Fig.4.300Light Output Power (mW)6050EQE (%)5000Pulsed condition with 1% duty cycleCurrent Density (A/cm)Lightoutputpowervscurrentdensityandexternalquantum??1??)LEDunderpulsede?ciencyvscurrentdensitycurvesforapackaged(202operation.Fig.3.??TLEDEQEanddroopperformanceofsemipolarblue-violete2021atvariouscurrentdensities.TableI.35A/cm2EQE(%)Droop(%)52.60.750A/cm250.74.3100A/cm248.48.5200A/cm245.314.3currentsunderpulseoperation.TheLEDshowsanegli-giblewavelengthshiftupto200A/cm2,indicatinggreatlyreducedpolarization-relatedelectric?eldsinsidetheQWs.Thisresultisalsoconsistentwithpreviouslyreportedm-planeLEDs.13)Moreover,theLEDexhibitsaverysmallFWHMinbothlow-andhigh-current-densityregions,whichsuggestsgoodcompositionalandstructuraluniformityfortheInGaNQWs.Theunderlyingcauseofthelowe?ciency??1??)LEDsisatopicofongoingdrooponsemipolar(202investigationandwillbereportedelsewhere.Insummary,wehavedemonstratedahigh-powerblue-??1??)LEDwithanEQEabove50%withvioletsemipolar(202lowdroopoperatingupto200A/cm2.Thedroopratioswere0.7%at35A/cm2,4.3%at50A/cm2,8.5%at100A/cm2,and14.3%at200A/cm2.ThedevelopmentofdeviceswithreduceddroopathighcurrentdensitiesisultimatelydesirableforcostsavingsandtoexpeditetheadoptionofLEDsforgenerallightingapplications.TheLEDalsoshowsastablepeakwavelengthwithincreasingdrivecurrentandanarrowFWHM,indicatinglowpolarization-relatedelectric?eldsandcompositionallyuniformInGaN.Theseresultssuggestthatspeci?csemipolarorientationsmayprovidebene?tsfordroopreductioninhigh-power,small-areaLEDs.AcknowledgmentsTheauthorsacknowledgethesupportoftheSolidStateLightingandEnergyCenteratUCSB.AportionofthisworkwasdoneattheUCSBnanofabricationfacility,partoftheNationalScienceFoundation(NSF)-fundedNationalNanotechnologyInfrastructureNetwork(NNIN).bestvalueseverreportedforsemipolarornonpolarLEDs.17)Moreover,theLEDdevicedemonstratesoutstandingdroopperformanceathighcurrentdensities.TableIshowstheEQEande?ciencydroopoftheLEDatvariouscurrentdensities.TheLEDexhibitsonly0.7%e?ciencydroopatacurrentdensityof35A/cm2andshowsalowdroopof14.3%atacurrentdensityof200A/cm2.Thedroopratiowasde?nedasdroopratio=eEQEmaxàEQEcdT=EQEmax?100%,wheretheEQEmaxandEQEcdrepresenttheEQEmaximumandtheEQEatdi?erentcurrentdensities,respectively.Tothebestoftheauthor’sknowl-edge,suchalowdroophasnotbeenreportedatcurrentdensitiesof200A/cm2.Figure4showstheELpeakwavelengthandfullwidthathalfmaximum(FWHM)oftheLEDatdi?erentdrive1)S.Nakamura,T.Mukai,andM.Senoh:Appl.Phys.Lett.64()M.H.Kim,M.F.Schubert,Q.Dai,J.K.Kim,E.F.Schubert,J.Piprek,3)4)5)6)7)8)9)andY.Park:Appl.Phys.Lett.91(.Y.C.Shen,G.O.Mu¨ller,S.Watanabe,N.F.Gardner,A.Munkholm,andM.R.Krames:Appl.Phys.Lett.91(.E.Kioupakis,P.Rinke,K.T.Delaney,andC.G.VandeWalle:Appl.Phys.Lett.98(.S.F.Chichibu,T.Azuhata,M.Sugiyama,T.Kitamura,Y.Ishida,H.Okumura,H.Nakanishi,T.Sota,andT.Mukai:J.Vac.Sci.Technol.B19(.B.MonemarandE.B.Sernelius:Appl.Phys.Lett.91(.A.A.Efremov,N.I.Bochkareva,R.I.Gorbunov,D.A.Larinovich,Yu.T.Rebane,D.V.Tarkhin,andYu.G.Shreter:Semiconductors40(.F.BernardiniandV.Fiorentini:Phys.StatusSolidiB216(.A.Hangleiter,J.S.Im,H.Kollmer,S.Heppel,J.O?,andF.Scholz:MRS#2011TheJapanSocietyofAppliedPhysicsAppl.Phys.Express4(InternetJ.NitrideSemicond.Res.3(1998)15.A.E.Romanov,T.J.Baker,S.Nakamura,andJ.S.Speck:J.Appl.Phys.100(.S.Chichibu,T.Azuhata,T.Sota,andS.Nakamura:Appl.Phys.Lett.69(.P.Walterweit,O.Brandt,A.Trampert,H.T.Grahn,J.Menniger,M.Ramsteiner,M.Reiche,andK.H.Ploog:Nature(London)406(.M.Schmidt,K.Kim,H.Sato,N.Fellows,H.Masui,S.Nakamura,S.P.DenBaars,andJ.S.Speck:Jpn.J.Appl.Phys.46(.H.Zhong,A.Tyagi,N.Fellows,F.Wu,R.B.Chung,M.Saito,K.Fujito,J.S.Speck,S.P.DenBaars,andS.Nakamura:Appl.Phys.Lett.90(.Y.Zhao,J.Sonoda,I.Koslow,C.C.Pan,H.Ohta,J.S.Ha,S.P.DenBaars,andS.Nakamura:Jpn.J.Appl.Phys.49(.Y.Zhaoetal.17)Y.Zhao,J.Sonoda,C.C.Pan,S.Brinkley,I.Koslow,K.Fujito,H.Ohta,10)11)12)13)14)S.P.DenBaars,andS.Nakamura:Appl.Phys.Express3(.18)S.Yamamoto,Y.Zhao,C.C.Pan,R.B.Chung,K.Fujito,J.Sonoda,S.P.DenBaars,andS.Nakamura:Appl.Phys.Express3(.19)Y.Enya,Y.Yoshizumi,T.Kyono,K.Akita,M.Ueno,M.Adachi,T.15)Sumitomo,S.Tokuyama,T.Ikegami,K.Katayama,andT.Nakamura:Appl.Phys.Express2(.20)T.Kyono,Y.Yoshizumi,Y.Enya,M.Adachi,S.Tokuyama,M.Ueno,K.Katayama,andT.Nakamura:Appl.Phys.Express3(.21)Y.D.Lin,S.Yamamoto,C.Y.Huang,C.L.Hsiung,F.Wu,K.Fujito,H.Ohta,J.S.Speck,S.P.DenBaars,andS.Nakamura:Appl.Phys.Express3(.22)C.C.Pan,I.Koslow,J.Sonoda,H.Ohta,J.S.Ha,S.Nakamura,andS.P.DenBaars:Jpn.J.Appl.Phys.49(.16)S.H.ParkandD.Ahn:Appl.Phys.Lett.90(.#2011TheJapanSocietyofAppliedPhysics三亿文库包含各类专业文献、文学作品欣赏、外语学习资料、幼儿教育、小学教育、中学教育、行业资料、高等教育、Y.Zhao 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　 Z Bang , A K Y Zen , D Huang et al . ... C L Liang , D Zhao , Z R Hong et al ....Appl . Phys. Lett . , 2000 , 77 : 4271～ ... 　) 4.Cao Y W,Cai X D, Li T J et al. ...Appl. Phys. Lett., 3. 2.Buono-...3.Yu L M, Ying L M, Zhao X S, Xia W S... 　图4(a)表明了在纳米镍中,三联点附近晶粒尺寸为35...Zhao et al., Adv. Mater. 20, )....Wu and Y. T. Zhu, Appl. Phys. Lett. 89, ... 　Optics Express, 2003 , 11(7): 723-734. [6]...Appl . Phys. Lett . , 2003 , 82 : 1503-...Zhao Y C, Wan G B, Zhao H L,et al. ... 　4) Y. S. Duan and S. L. Zhang (张胜利),...Zhang et al, Assignment of the chiralities of ...Theor. Phys. 45, 849 (2006). 46) R. Zhao,... 　Y4 受体受胰多肽激活,而其 他受体被 NPY 和 PYY 激活。 2 神经肽 Y 调控...来减少细胞内的 Ca 浓度,从 而直接抑制 NPY 神经元的活性(Zhao et al.,... 　Appl. Biochem. Biotech, ): 1-9. ...[29] ZHAO Y, LI F, ZHANG R, et al. ...J Phys Chem C, : . [31... 　[45] ZHOU Wen-Ping, ZHAO Yan-Xin, ZHAO Guang...WANG Shou-Yu et al., Band Structure in 125Cs...Appl. Phys . 92 , ). [137] W.-...您好，欢迎来到机电之家网！ [
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M81X25H4Y 可以监控制动情况，并使得安全制动器满足工业4.0的挑战。此外，与制动技术4.0紧密相连的是技术的摩擦系统及始终恪守的安全原则，这些都是构成极高性能密度的安全可靠的制动器的基础。MSMA302S1T专家系统是利用所谓“专家”的经验进行控制的一种控制方式，因此，专家系统中一般要建立一个专家库，存放一定的专家信息，另外还要有推理机制，以便于根据已知信息寻求理想的控制结果。专家库与推理机制的设计是尤为重要的，关系着专家系统控制的优劣。应用专家系统既可以控制变频器的电压，又可以控制其电流。&&&& 学习控制主要是用于重复性的输入，而规则的PWM例如中心调制PWM恰好满足这个条件，因此学习控制也可用于变频器的控制中。学习控制不需要了解太多的系统信息，但是需要~个学习周期，因此快速性相对较差，而且，学习控制的算法中有时需要实现超前环节，这用模拟器件是无法实现的，同时，学习控制还涉及到一个稳定性的问题，在应用时要特别注意。【松下伺服电机代理销售 程先生 139 188 644 73 QQ 937 926 739 】MDME202SCCM&&&&& 随着电力电子技术微电子技术计算机网络等高新技术的发展，M81X25H4Y变频器的控制方式今后将向以下几个方面发展。&数字控制变频器的实现&&&&& 现在，变频器的控制方式用数字处理器可以实现比较复杂的运算，变频器数字化将是一个重要的发展方向，目前进行变频器数字化主要采用单片机MCS或0CMC等，辅助以SLE0或EPLD液晶显示器等来实现更加完善的控制性能。&多种控制方式的结合&&&&& 单一的控制方式有着各自的优缺点，并没有“万能”的控制方式，在有些控制场合，需要将一些控制方式结合起来，例如将学习控制与神经网络控制相结合，自适应控制与模糊控制相结合，直接转矩控制与神经网络控制相结合，或者称之为“混合控制”，这样取长补短，控制效果将会更好。
松下伺服电机M81X25H4Y- 成功之前我们要做应该做的事情，成功之后我们才可以做喜欢做的事情。
&&&&& 计算机网络的发展，M81X25H4Y使“天涯若咫尺”，依靠计算机网络对变频器进行远程控制也是一个发展方向。通过RS接口及一些网络协议对变频器进行远程控制，这样在有些不适合于人类进行现场操作的场合，也可以很容易的实现控制目标。&GYG851BC2-T2G-B&GTK-85L&ETC13.M &CN-M3030A-P14S12&&CP30-BA 5A &E3Z-B81 &SRS14A-8PN-90-P100000 &TPC7062KX&&C15MTV0RA0300&MSMA3AZS1F&MSMA202P1T&&SKET400/12E&耐德按钮开关 XB7EA45CSoftware,Digivis 500,&GYG751CC2-T2G-B&GTK-100L&ETC41 &CN-M3030A-P24S12&&WAGO 750-842& &EE-SX871U &SR1-8V-1CSR91-8V-90-1N0&IPC1701-S&&C24MTC0SA&MSMA3AZS1G&MSMA152S1T&&SKET400/14E&富士接触器 SC-E1P 100-110VS800 通讯冗余模件底座TU840,&GYS401DC2-T2B-B&GTK-150L&ETC618046&CB-H3425A-P14P2&&UNIGATE CL-C4 &EE-SX872A &FP33-YN-101050&VB-32XYT&&C205GA00301 &MSMA3AZS1H&MSMA102S1G&&SKET400/16E&6ES7 277-0AA22-0XA0 98 EM277送西门子DP插头S800 通讯冗余模件底座TU841,&GYS401D5-HC6-B&GTK-220L&ETC6&CB-H3425A-P24P2&&6ES-0XB0& &销售插线EE-1010-R &FP33-VN-101050&VH-14MT&&C200DA00601&MSMA5AZS1B&MHMA502P1C&&SKIIP82AC12IT1&V80西门子伺服加电机6SL-0AB0 1FL-0AB0S800 通讯模件TB40A,&RYC101D3-VVT2&GTK-400L&安川变频器616F7-18.5kw&CN-H3425A-P14P2&&TWDNOZ485T &EE-SX914-R槽型 &SR4-8P-1W&VH-14MR&&C15TC0LA0300&MSMA5AZS1C&MHMA402S1V&&SKM300GB123D&销量第一 S7-200 CPU224XP 6ES7 214-2BD23-0XB8S800 I/O模件DI811,&GYS201DC2-T2A&&&& &GTK-600L&安川变频器616F7-22KW&CN-H3425A-P24P2&&TWDLMDA40DUK &EE-SX911P-R槽型& &SR93-8I-N-90-1400 &FX3U-16MT/DS&&C40B5G4AS091D0&MSMA5AZS1D&三菱电机E402S1H&&SKM300GB124D&CPU224XP 西门子S7-200CN 6ES7 214-2AD23-0XB8& DC24V供电S800 I/O模件底座TU838,&GYS401DC2-T2A&&&& &GTH-12M&安川变频器616F7-30KW&CB-H3425A-P14S12&&CQM1-AD041&E3T-SL21&SR93-8V-N-90-1400&MDS-C1-CV-150&&C36TCOUA1000 &MSMA5AZS1E&三菱电机E402S1D&&SKM300GB128D&西门子SIMATIC S7-200CN系列PLC 6ES7 214-2AD23-0XB8S800 通讯模件CI840A底座TU847,&RYC401D3-VVT2 &GTH-12MH&安川驱动器主板SGDS-IF12SA适用于&CB-H3425A-P24S12&&FX2N-16MR-001 &E3S-BD11& &SR94-8I-N-90-1000 &GT15-RS4-9S&&C35TR1UA2100&MSMA5AZS1F&MHMA402P1T&&SKIIP82ANB15T1&富士空气开关 EA203C 200AS800 通讯模件CI840A底座TU846,&GYS751DC2-T2A&&&& &GTK-12M&SGDS-08A01A&CN-H3425A-P14S12&&FX0N-8EYT &E3F3-D62&SR94-8V-N-90-1000&MT6056IH&&C26TC0UA1100&MSMA5AZS1G&三菱电机E402G1S&&SKIIP83ANB15T1&库存新的原包装神视光纤传感器 FD-FM2PP800面板PP877,&RYC751D3-VVT2 &GTK12MH&12A/15/20/30/50 &CN-H3425A-P24S12&&CPM02SSR-A&E3S-5E4 &SR94-8Y-N-90-1000 &QX42/QY42P&&C36TVCUA1100&MADCT1103&三菱电机E402G1T&&SKD100/04&西门子LOGO 6ED1 052-2FB00-0AB3特价Compact HMI 800,&GYS201DC2-T2A-B&& &GTH-22E&SGDS-08A12A&CB-M1808U-C15P2&&VFD007M21A& &E3S-5L &FP93-8Y-90-0000 &FX1S-30MR-D&&C10S0DTA0100&MADCT1105&三菱电机E302S1S&&SKD100/08&漏电断路器 EG32AC 2P 15AAC31模块07KP53,&GYS401DC2-T2A-B&& &AU-2& SGDS-08A15A&CB-M1808U-C25P2&&D-A96V& &E3Z-D62反射型探头 &FP93-8V-90-0000&VH-8YR&&C24MTVOSA1000&MADCT1503&三菱电机E302S1H&&SKD100/12&西门子 s7-200 EM235 6ES7 235-0KD21-0XA0存储卡MB801V512,&GYS751DC2-T2A-B&& &AU-4&SGDS-20A01A&CN-M1815U-C15P2&&D-A73&& &EE-SX871&FP93-8V-90-0050&HC-MP43&&C36TC0UA2100&MADCT1505&三菱电机E352G1D&&SKD100/14&CT小直流调速器 FXM5 10A-20AAC800M编程软件CCB,数据交换软件OPC, V5.1&GYG501CC2-T2E&&&& &AU-1&SGDS-30A01A&CN-M1815U-C25P2&&E3HT-DS3E1 &电眼槽型EE-SX672 &FP93-8Y-90-0050 &HC-MP43B&&C15MTC0RA0100&MSMA3AZA1B&三菱电机E352G1V&&SKD100/16&台达 DVP14EC00R2 V6.80版本 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&AS-12&SGDH-44AE&CB-M3020U-P25S12&&CQM1-AD041 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MSMA011C32&MSMA012C29&MSMA021C28&MSMA022C27&MSMA041C25&MSMA042C19&MSMA082C18& MSMA011C33&MSMA012C32&MSMA021C29&MSMA022C28&MSMA041C27&MSMA042C25&MSMA082C19& MSMA011C34&MSMA012C33&MSMA021C32&MSMA022C29&MSMA041C28&MSMA042C27&MSMA082C25& MSMA011C35&MSMA012C34&MSMA021C33&MSMA022C32&MSMA041C29&MSMA042C28&MSMA082C27& MSMA011C37&MSMA012C35&MSMA021C34&MSMA022C33&MSMA041C32&MSMA042C29&MSMA082C28& 500W MDMA252A1G MDDA253A1A 3000W MDMA302A1G MDDA303A1A 3500W MDMA352A1G MDDA353A1A 4000W MDMA402A1G MDDA403A1A 4500W MDMA452A1G MDDA453A1A 5000W MDMA502A1G MDDA503A1A500W MHMA052A1G MHDA053A1A 1000W MHMA102A1GMHDA103A1A 1500W MHMA152A1G MHDA153A1A 2000W MHMA202A1G MHDA203A1A 3000W MHMA302A1G MHDA303A1A 4000W MHMA402A1G MHDA403A1A 5000W MHMA502A1G MHDA503A1A
<FONT color=#ffH4Y 如今夜色掩映下的武汉长江江滩两岸，大家无论是在江堤上漫步，还是乘船溯江而行，不仅可以欣赏夜景，更重要的是可以饱览武汉两江四岸美仑美奂的灯光表演秀。大家可以看到两岸沿途灯光不断变化各种惊艳的图案。如今大家可以看到以观荆江山水、听江城呼声、查武汉色彩、品武汉韵味、嗅发展气息等五大主题的动态灯光秀。唯美而灵动的灯光秀，不仅让大家一饱眼福，而且还能了解武汉这座城市的文化风韵与现代气息。对于武汉这座城市而言，3D灯光秀是展现武汉城市魅力的一张新名片。
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